Kim Transistor Performance Polymer Gate Dielectric Surface Viscoelasticity Modulates Pentacene
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, 76 (2007); 318 Science et al. Choongik Kim Transistor Performance Polymer Gate Dielectric Surface Viscoelasticity Modulates Pentacene This copy is for your personal, non-commercial use only. clicking here. colleagues, clients, or customers by , you can order high-quality copies for your If you wish to distribute this article to others here. following the guidelines can be obtained by Permission to republish or repurpose articles or portions of articles ): April 2, 2014 www.sciencemag.org (this information is current as of The following resources related to this article are available online at http://www.sciencemag.org/content/318/5847/76.full.html version of this article at: including high-resolution figures, can be found in the online Updated information and services, http://www.sciencemag.org/content/suppl/2007/10/05/318.5847.76.DC1.html can be found at: Supporting Online Material http://www.sciencemag.org/content/318/5847/76.full.html#ref-list-1 , 7 of which can be accessed free: cites 35 articles This article http://www.sciencemag.org/content/318/5847/76.full.html#related-urls 2 articles hosted by HighWire Press; see: cited by This article has been http://www.sciencemag.org/cgi/collection/mat_sci Materials Science subject collections: This article appears in the following
منابع مشابه
Polymer gate dielectric surface viscoelasticity modulates pentacene transistor performance.
Nanoscopically confined polymer films are known to exhibit substantially depressed glass transition temperatures (Lg's) as compared to the corresponding bulk materials. We report here that pentacene thin films grown on polymer gate dielectrics at temperatures well below their bulk Tg's exhibit distinctive and abrupt morphological and microstructural transitions and thin-film transistor (TFT) pe...
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